• Gold Ball Wire Bonding (Thermosonic @ +150°C).
  • Gold Wedge Wire Bonding (Thermosonic @ +150°C).
  • Aluminum Wedge Wire Bonding (Ultrasonic @ +25°C).
  • Ribbon Bonding for high frequency applications 20-100 GHz.

Gold Ball Wire Bonding process is called ball-to-wedge (stitch) bonding. It is the most widely used assembly process in the semiconductor industry to interconnect the die circuitry to a package or substrate. This method is commonly known as Thermosonic gold ball wire bonding. It uses force, power, time, ultrasonic energy and temperature up to 150°C.

Aluminum and Gold Wedge Wire Bonding process is called wedge-to-wedge bonding. The difference between the two wire materials is that aluminum wedge wire bonding is an Ultrasonic bonding process done with temperature at 25°C and gold wedge wire bonding is a Thermosonic bonding process done with temperature up to 150°C.

Ribbon Bonding is recommended for high frequency applications of 20-100 GHz. The higher the frequency, the shorter the wire needs to be for the circuit to function the way it is designed. Ribbon wire inherently carries lager amounts of power and generates stronger wire pull interconnects that last longer.

Wire Bonding and Ribbon Bonding Capabilities

  • Wire Bonding wire diameter: 18um to 50μm (0.7 mil to 2 mil)
  • RF Ribbon Bonding: 50×12 um (2×0.5 mil) and 75×12 um (3×0.5 mil).
  • POWER Ribbon Bonding: 100×25 um (4×1 mil) up to 250×25 um (10×1 mil).
  • Fine Pitch Wire Bonding: ≥45 μm (1.80 mil) bond pad pitch capability.
  • Wire Bond Area (Small), Au Ball: 56mm x 80mm (2.20”x3.15”).
  • Wire Bond Area (Large), Al & Au Wedge: 250mm x 200mm (10.0”x8.0”).
  • Loop height: 100um (4 mil) minimum, typical 200um to 300μm (8 mil to 12 mil).
  • Wire length: 300μm (12 mil) minimum up to 150x wire diameter.
  • ENIG (IPC-4552): Ni 3-6μm (118-236 μin), Au ≥0.05μm (≥2 μin).
  • ENEPIG (IPC-4556): Ni 3-6μm (118-236 μin), Pd 0.05-0.3μm (2-12 μin), Au ≥0.1μm (≥4 μin).