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Flip Chip Bonding

Flip chip developed for high interconnect density has grown to be a favorite for new product development (NPI). Flip chip bonding comes in two main forms: Controlled Collapse Chip Connection (C4) with pitch sizes from 150um to 250um and Cu Pillar with pitch sizes from 30um and 140um. Both forms of flip chip involving solder balls/ bumps and a thermocompression process (heat, time, force) to create a metallic bond with the substrate.

Flip Chip (C4)

Flip-chip C4 technology, also known as Controlled Collapse Chip Connection, connects IC chips to a substrate using solder balls on the chip’s top-side bond pads, with pitch from 150um to 250um, and using eutectic (Sn63Pb37) or lead-free (SAC305) solder.

Flip Chip (Cu Pillar)

Flip-chip Cu-pillar technology uses small, vertical copper posts (Cu pillars) with a solder bump to create interconnects between a chip and a substrate enabling high frequency applications with 30um to 140um pitch, resulting in higher I/O counts, short interconnections and smaller form factor.

Underfill

The non-conductive adhesive, commonly called “underfill,” is applied to the stand-off distance between the flip chip die and substrate after the die is connected, providing stress relief, robustness, and moisture protection.

Flip Chip Processes

Flip chip bonding (face down) +/-2um.

Precision die bonding (face up) +/-2um.

Underfill between flip chip die and substrate.

Thermocompression and thermosonic bonding.

Epoxy, eutectic soldering and silver sintering.

2.5D and 3D IC packaging (stacking).

Chip on Board, Flex, Glass: COB, COF, COG.

Wafer level packaging: FOWLP, W2W, C2W.

Cu Pillar 30um to 140um pitch; (C4) 150um to 250um pitch.